PART |
Description |
Maker |
SPP80N03S2L-03 SPB80N03S2L-03 SPI80N03S2L-03 |
80 A, 30 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220, 3 PIN OptiMOS Power-Transistor 的OptiMOS功率晶体 Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 2.8mOhm, 80A, LL Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.1mOhm, 80A, LL 80 A; 30V; LL; 3,1 mOhm
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INFINEON[Infineon Technologies AG]
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IRHMB58064 IRHMB53064 IRHMB54064 IRHMB57064 |
45 A, 60 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
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IRF[International Rectifier] http://
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SPP80N03S2-03 SPB80N03S2-03 SPI80N03S2-03 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.1 mOhm, 80A, NL Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.4 mOhm, 80A, NL OptiMOS Power-Transistor 的OptiMOS功率晶体 80 A, 30 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220, 3 PIN
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INFINEON[Infineon Technologies AG]
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IPW65R190C6 IPA65R190C6 IPP65R190C6 |
650 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 650V CoolMOS C6 Power Transistor Extremely low losses due to very low FOM Rdson*Qg and Eoss
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Infineon Technologies AG
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STB70NF03L-1 STP70NF03L |
BOX MOUNTING RECEPTACLE N沟道30V 0.008ohm - 70A条TO-220/I2PAK低栅极电荷STripFET⑩功率MOSFET Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:4VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:220uF; Capacitance N-CHANNEL MOSFET N-CHANNEL 30V - 0.008ohm - 70A TO-220/I2PAK LOW GATE CHARGE STripFET POWER MOSFET N-CHANNEL 30V - 0.008ohm - 70A TO-220/I2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET N-CHANNEL 30V - 0.008 OHM -70A TO-220/I2PAK LOW GATE CHARGE STRIPFET POWER MOSFET
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STMicroelectronics N.V. 意法半导 ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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IXFN38N100Q2 |
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 38 A, 1000 V, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
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IXYS, Corp. IXYS[IXYS Corporation]
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STB30NF10T4 STB30NF1006 STP30NF10FP STB30NF10 |
35 A, 100 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB N-channel 100V - 0.038ヘ - 35A - D2PAK/TO-220/TO-220FP Low gate charge STripFET⑩ II Power MOSFET N-channel 100V - 0.038Ω - 35A - D2PAK/TO-220/TO-220FP Low gate charge STripFET II Power MOSFET
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STMicroelectronics
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OM6233SS OM6227SS OM6233SSV OM6231SS OM6232SS OM62 |
1000V Dual N-Channel MOSFET in a S-6D package 500V Dual N-Channel MOSFET in a S-6D package 400V Dual N-Channel MOSFET in a S-6D package 500V Dual N-Channel MOSFET in a S-6E package 1000V Dual N-Channel MOSFET in a S-6E package SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6D, SIP-6 400V Dual N-Channel MOSFET in a S-6E package 400V双N沟道MOSFET的在一个S - 6E条包 10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6E, SIP-6
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International Rectifier Electronic Theatre Controls, Inc. Atmel, Corp.
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SPP80N10L SPB80N10L SPI80N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=14mOhm, 80A, LL Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=14mOhm, 80A, LL Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=14mOhm, 80A, LL SIPMOS Power-Transistor
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INFINEON[Infineon Technologies AG]
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SPB08P06P SPP08P06P SPB08P06PSMD |
SIPMOS Power-Transistor Low Voltage MOSFETs - Power MOSFET, -60V, D2PAK, RDSon = 0.30 Low Voltage MOSFETs - Power MOSFET, -60V, TO-220, RDSon = 0.30
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Infineon Technologies A... INFINEON[Infineon Technologies AG]
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IRF7750GPBF |
HEXFET庐 Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET
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International Rectifier
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IRF7507PBF IRF7507TRPBF IRF7507PBF-15 |
Generation V Technology HEXFET㈢Power MOSFET HEXFET?Power MOSFET Ultra Low On-Resistance
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International Rectifier
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